Semiconductor element having conductive damascene structures extending perpendicular to doping strips, and manufacturing method of the same
US9312139B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element and a manufacturing method of the same are provided. The semiconductor element includes a substrate, a plurality of doping strips, a memory material layer, a plurality of conductive damascene structures, and a dielectric structure. The doping strips are formed in the substrate. The memory material layer is formed on the substrate, and the memory material layer comprises a memory area located on two sides of the doping strips. The conductive damascene structures are formed on the memory material layer. The dielectric structure is formed on the doping strips and between the conductive damascene structures. The conductive damascene structures are extended in a direction perpendicular to a direction which the doping strips are extended in.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.