Impurity-doped layer formation apparatus and electrostatic chuck protection method
US9312163B2 · kind B2 · utility
4Cited by
22References
9Claims
0Family size
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Key dates
| Filing date | Jul 13, 2012 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jul 21, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck protection method includes providing an exposed chuck surface with a protective surface for preventing adherence of foreign materials including a substance exhibiting volatility in a vacuum environment, and removing the protective surface in order to perform a process of forming a substrate electrostatically held on the chuck surface with a surface layer including a substance having volatility in a vacuum chamber. The protective surface may be provided when a low vacuum pumping mode of operation is performed in a vacuum environment surrounding the chuck surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.