Metal on elongated contacts
US9312170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/966
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect. A process of forming an integrated circuit containing elongated contacts, including elongated contacts which connect to at least three active areas and/or MOS gates, using exactly two contact photolithographic exposure operations, and including elongated contacts which connect to exactly two active areas and/or MOS gates and directly connect to a first level interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.