Semiconductor device, electronic device including the same and manufacturing methods thereof
US9312181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.