Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
US9312376B2 · kind B2 · utility
6Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | May 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.