Semiconductor device having deep implantation region and method of fabricating same
US9312380B2 · kind B2 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Mar 19, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jun 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source well having the first conductivity type and disposed in the high-voltage well, a drift region disposed in the high-voltage well and spaced apart from the source well, and a deep implantation region having the first conductivity type and disposed in the high-voltage well between the source well and the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.