Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
US9312401B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Nov 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.