P-contact with more uniform injection and lower optical loss
US9312437B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 29, 2012 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Nov 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.