Nanowire structure and method for manufacturing the same
US9312442B2 · kind B2 · utility
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29References
1Claims
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Key dates
| Filing date | Aug 18, 2015 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Aug 18, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.