Patent · US Active

Magnetic devices and methods of manufacturing the same

US9312478B2 · kind B2 · utility

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18Claims
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Key dates

Filing dateAug 20, 2012
Grant dateApr 12, 2016
Priority date
Expiry dateSep 10, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24479
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.