Resistance variable memory structure and method of forming the same
US9312482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2013 |
| Grant date | Apr 12, 2016 |
| Priority date | — |
| Expiry date | Jun 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0045
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, a protection material and a second electrode. The first electrode has a top surface on the memory region. The resistance variable layer has at least a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection material surrounds the second portion of the resistance variable layer. The protection material is configurable to protect at least one conductive path in the resistance variable layer. The second electrode is disposed over the resistance variable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.