Crystalline silicon ingot and method of fabricating the same
US9315918B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Mar 9, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B9/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.