Memory column drowsy control
US9317087B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Nov 6, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In accordance with at least one embodiment, column level power control granularity is provided to control a low power state of a memory using a drowsy column control bit to control the low power state at an individual column level to protect the memory from weak bit failure. In accordance with at least one embodiment, a method of using a dedicated row of bit cells in a memory array is provided wherein each bit in the row controls the low power state of a respective column in the array. A special control signal is used to access the word line, and the word line is outside of the regular word line address space. A mechanism is provided to designate the weak bit column and set the control bit corresponding to that particular column to disable the drowsy/low power state for that column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.