System and method for modeling epitaxial growth in a 3-D virtual fabrication environment
US9317632B2 · kind B2 · utility
9Cited by
3References
17Claims
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A virtual fabrication environment for semiconductor device structure development is discussed that enables the use of a selective epitaxy process to virtually model epitaxial growth of a crystalline material layer. The epitaxial growth occurs on a crystalline substrate surface of a virtually fabricated model device structure. A surface growth rate may be defined over possible 3D surface orientations of the virtually fabricated device structure by modeling the growth rates of the three major families of crystal planes. Growth rates along neighboring non-crystalline material may also be modeled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.