Non-volatile semiconductor memory device
US9318196B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory device capable of programming SRAM data in an SRAM into a non-volatile memory unit while implementing a high-speed operation in the SRAM, a voltage required to program the SRAM data into the non-volatile memory unit can be lowered. Thus, the SRAM can be operated at high speed with a low power supply voltage because the thickness of a gate insulating film of each of a first access transistor, a second access transistor, a first load transistor, a second load transistor, a first drive transistor, and a second drive transistor constituting the SRAM connected to the non-volatile memory unit can be set to 4 [nm] or less. Therefore, the SRAM data in the SRAM can be programmed into the non-volatile memory unit while a high-speed operation in the SRAM can be implemented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.