Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials

US9318315B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Johannes Mueller · Berlin, DE
• Dina H. Triyoso · Mechanicville, US
• Mark Nolan · El Reno, US
• Wenke Weinreich · Dresden, DE
• Konrad Seidel · Dresden, DE
• Patrick Polakowski · Dresden, DE

Key dates

• Filing date: Feb 10, 2014
• Grant date: Apr 19, 2016
• Expiry date: Feb 10, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/66
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides integrated circuit elements and MIM/MIS capacitors having high capacitance and methods of forming according integrated circuit elements and integrated MIM/MIS capacitors and methods of controlling an integrated circuit element and an integrated MIM/MIS capacitor. In various aspects, a substrate is provided and a dielectric layer or insulating layer is formed over the substrate. Furthermore, an electrode layer is disposed over the dielectric layer or insulating layer. Herein, the dielectric layer or insulating layer is in an antiferroelectric phase. In various illustrative embodiments, the integrated circuit element may implement a MOSFET structure or a capacitor structure.