Patent · US Active

Method for fabricating semiconductor device

US9318338B2 · kind B2 · utility

1Cited by

2References

10Claims

0Family size

Assignee

UNITED MICROELECTRONICS CORP. · TW

Inventors

Bor-Shyang Liao
Tsung-Hsun Tsai · Redmond, US
Kuo-Chih Lai · Tainan, TW
Pin-Hong Chen · Yuanchang, TW
Chia-Chang Hsu
Shu Min Huang · Tainan, TW
Min-Chung Cheng · Taoyuan, TW
Chun-Ling Lin · Tainan, TW

Key dates

Filing date	Aug 19, 2013
Grant date	Apr 19, 2016
Priority date	—
Expiry date	Aug 19, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28518
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.