Methods of manufacturing semiconductor devices including air gap spacers
US9318379B2 · kind B2 · utility
9Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Nov 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.