Patent · US Active

Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof

US9318421B2 · kind B2 · utility

0Cited by

6References

18Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Martin Becker · Kiel, DE
Ronald Eisele · Surendorf, DE
Frank Osterwald · Kiel, DE
Jacek Rudzki · Kiel, DE

Key dates

Filing date	Sep 10, 2012
Grant date	Apr 19, 2016
Priority date	—
Expiry date	Sep 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.