IGBT using trench gate electrode
US9318590B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 2, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Apr 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
An IGBT includes a trench gate electrode that is bent when a semiconductor substrate is seen in a plan view, and an inner semiconductor region of the same conductivity type as an emitter region is formed at a position inside a bent portion of the trench gate electrode and exposed on a front surface of the semiconductor substrate. The trench gate electrode is bent, and therefore, a hole density during operation increases, whereby conductivity modulation phenomenon is accelerated, and an on-state voltage is reduced. When the IGBT is turned off, the inner semiconductor region influences a movement path of the holes so that a moving distance thereof through a body region becomes short. The holes escape easily to a body contact region when the IGBT is turned off. Increase of current density during the operation and prevention of a latchup are both achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.