Trench MOSFET having reduced gate charge
US9318598B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2014 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/144
Abstract
A trench MOSFET device includes a semiconductor layer of a first doping type. MOS transistor cells are in a body region of a second doping type in the semiconductor layer. The transistor cells include a first cell type including a first trench providing a first gate electrode or the first gate electrode is on the semiconductor surface between the first trench and a second trench, and a first source region is formed in the body region. The first gate electrode is electrically isolated from the first source region. A second cell type has a third trench providing a second gate electrode or the second gate electrode is on the semiconductor surface between the third trench and a fourth trench, and a second source region is in the body region. An electrically conductive member directly connects the second gate electrode, first source region and second source region together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.