Ion implantation and annealing for thin film crystalline solar cells
US9318644B2 · kind B2 · utility
2Cited by
93References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2012 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.