Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern
US9318695B2 · kind B2 · utility
6Cited by
43References
4Claims
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Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.