Thin film deposition apparatus with multi chamber design and film deposition methods
US9324559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2013 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02181
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.