Patent · US Active

Integrated circuit heat dissipation using nanostructures

US9324628B2 · kind B2 · utility

6Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2014
Grant dateApr 26, 2016
Priority date
Expiry dateMay 8, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/121
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.