Three-dimensional (3D) non-volatile memory device
US9324732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Feb 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/292
Abstract
A three-dimensional (3D) non-volatile semiconductor memory device including a U-shaped channel structure is disclosed. The 3D non-volatile semiconductor memory device includes a pipe gate, an upper pipe channel disposed in the pipe gate at a first depth, a first lower pipe channel disposed in the pipe gate at a second depth different from the first depth, and neighboring the upper pipe channel in a first direction, and a second lower pipe channel disposed in the pipe gate at the second depth, and neighboring the upper pipe channel in a second direction perpendicular to the first direction, wherein the upper pipe channel and the lower pipe channels have the same length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.