Image sensors with reduced stack height
US9324755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Oct 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.