Method of making image sensor devices having a concave reflective shield
US9324761B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 22, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Jan 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A method of forming an image sensor device where the method includes forming a first dielectric layer on a substrate. The method further includes patterning the first dielectric layer to define an area for a reflective shield, where the area defined for the reflective shield is above a photodiode. Additionally, the method includes forming the reflective shield on the substrate by filling the defined area with a high reflectivity material, and the high reflective material comprises a polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.