Volume Chien
83Patents
6h-index
63Co-inventors
75Inventor score
Filing activity: Jul 2, 2002 → Jul 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9281338B2 | Semiconductor image sensor device having back side illuminated image sensors with embedded color filters | Electricity | 9 | Active |
| US9368531B2 | Formation of buried color filters in a back side illuminated image sensor with an ono-like structure | Electricity | 8 | Active |
| US9553118B2 | Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer | Electricity | 7 | Active |
| US9123839B2 | Image sensor with stacked grid structure | Electricity | 7 | Active |
| US9293490B2 | Deep trench isolation with air-gap in backside illumination image sensor chips | Electricity | 7 | Active |
| US9024369B2 | Metal shield structure and methods for BSI image sensors | Electricity | 6 | Active |
| US9543353B2 | Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure | Electricity | 6 | Active |
| US9768221B2 | Pad structure layout for semiconductor device | Electricity | 6 | Active |
| US10276620B2 | Image sensor device and method for forming the same | Electricity | 6 | Active |
| US6863796B2 | Method for reducing cu surface defects following cu ECP | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9825085B2 | Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer | Electricity | 5 | Active |
| US10181491B2 | Semiconductor image sensor device having back side illuminated image sensors with embedded color filters | Electricity | 5 | Active |
| US9786710B2 | Image sensor device with sub-isolation in pixels | Electricity | 5 | Active |
| US9252180B2 | Bonding pad on a back side illuminated image sensor | Electricity | 5 | Active |
| US8816415B2 | Photodiode with concave reflector | Electricity | 4 | Active |
| US9640456B2 | Support structure for integrated circuitry | Electricity | 4 | Active |
| US10056426B2 | Apparatus and method for fabricating a light guiding grid | Physics | 4 | Active |
| US8629523B2 | Inserted reflective shield to improve quantum efficiency of image sensors | Electricity | 4 | Active |
| US9591242B2 | Black level control for image sensors | Electricity | 3 | Active |
| US9627426B2 | Image sensor device and method for forming the same | Electricity | 3 | Active |
| US9196547B2 | Dual shallow trench isolation and related applications | Electricity | 3 | Active |
| US10770502B2 | Semiconductor image sensor device having back side illuminated image sensors with embedded color filters | Electricity | 3 | Active |
| US11011566B2 | Bonding pad on a back side illuminated image sensor | Electricity | 2 | Active |
| US8962375B2 | Method of making a reflective shield | Electricity | 2 | Active |
| US10269684B2 | Semiconductor structure and manufacuting method of the same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.