Semiconductor light emitting device and light emitting apparatus
US9324904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2015 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Aug 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.