Light emitting diode
US9324910B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Dec 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26546
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.