Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures
US9324911B2 · kind B2 · utility
4Cited by
5References
29Claims
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Key dates
| Filing date | Dec 19, 2012 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Jun 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride material into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a hydride vapor phase epitaxy (HVPE) chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.