Method for manufacturing a die assembly having a small thickness and die assembly relating thereto
US9327964B2 · kind B2 · utility
6Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor body of the second wafer; and subsequently bonding the second wafer to a third wafer, the third wafer forming a micro-electromechanical sensing structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.