Non-volatile memory devices, operating methods thereof and memory systems including the same
US9330770B2 · kind B2 · utility
8Cited by
81References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2015 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Jan 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.