Nitrogen-containing oxide film and method of forming the same
US9330901B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 1, 2013 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Mar 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.