Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency
US9331116B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Feb 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A single photon avalanche diode (SPAD) includes an n doped epitaxial layer disposed in a first semiconductor layer. A p doped epitaxial layer is above the n doped epitaxial layer on a back side of the first semiconductor layer. A multiplication junction is defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer. A multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction. A p− doped guard ring region is implanted in the n doped epitaxial layer surrounding the multiplication junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.