Integrated circuit and method of fabricating the same
US9331136B2 · kind B2 · utility
0Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.