Semiconductor structure having field plates over resurf regions in semiconductor substrate
US9331143B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor structure is provided. The semiconductor structure comprises: a substrate; a first doping region, a first well and a second doping region formed in the substrate; a plurality of first heavily doped regions formed in the first doping region; a plurality of conductors and a plurality of dielectrics formed on the substrate between the first heavily doped regions; a second heavily doped region formed in the first well; a third heavily doped region and a fourth heavily doped region formed in the second doping region; as well as a first gate electrode and a first gate dielectric. The first doping region, the first well, the second heavily doped region and the fourth heavily doped region have a first type of doping. The second doping region, the first heavily doped regions and the third heavily doped region have a second type of doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.