Split-gate non-volatile memory cells having gap protection zones
US9331160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2013 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/696
Abstract
Split-gate non-volatile memory (NVM) cells having gap protection zones are disclosed along with related manufacturing methods. After formation of a gate for a split-gate NVM cell over a substrate, a doped region is formed adjacent the gate. A first portion of the doped region is then removed to leave a second portion of the doped region that forms a gap protection zone adjacent the gate. For some disclosed embodiments, a select gate is formed before a control gate. For other disclosed embodiments, the control gate is formed before the select gate. The gap protection zones can be formed, for example, using an etch processing step to remove the desired portions of the doped region, and a spacer can also be used to protect the gap protection zone during this etch processing step. Related NVM systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.