Oxide material and semiconductor device
US9331206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2012 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Mar 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Stable electrical characteristics are given to a transistor and a highly reliable semiconductor device is provided. In addition, an oxide material which enables manufacture of such a semiconductor device is provided. An oxide film is used in which two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane (or the top surface, or the formation surface) are included, and each of the crystalline portions is c-axis aligned, has at least one of triangular atomic arrangement and hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, a top surface, or a formation surface, includes metal atoms arranged in a layered manner, or metal atoms and oxygen atoms arranged in a layered manner along the c-axis, and is expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.