Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus
US9334567B2 · kind B2 · utility
3Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.