Beam-induced deposition of low-resistivity material
US9334568B2 · kind B2 · utility
0Cited by
12References
21Claims
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Key dates
| Filing date | Jul 14, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.