Patent · US Active

Memory device for reducing a write fail, a system including the same, and a method thereof

US9335951B2 · kind B2 · utility

8Cited by
6References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 29, 2013
Grant dateMay 10, 2016
Priority date
Expiry dateJan 28, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02D10/00
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller is configured to continuously perform a plurality of write commands on the memory device between an active command and a precharge command. In the memory system, when after a first write operation having a last write command of the plurality of write commands is performed and then the precharge command is issued, the last write command is issued for a second write operation after the precharge command. The first write operation and the second write operation write a same data to memory cells of plurality of memory cells having a same address.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.