Memory device including nonvolatile memory cell
US9336894B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/53
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device may include nonvolatile memory cells. A first memory cell of the nonvolatile memory cells may have a first resistance value in a first state and a second memory cell of the nonvolatile memory cells may have a second resistance value less than the first resistance value in a second state. A third memory cell of the nonvolatile memory cells may have a third resistance value less than the first resistance value and greater than the second resistance value in a third state, and a fourth memory cell of the nonvolatile memory cells may have a fourth resistance value less than the third resistance value and greater than the second resistance value in a fourth state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.