Method of forming pattern of semiconductor device
US9337032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2014 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jul 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.