Dielectric tone inversion materials
US9337033B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Nov 19, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.