Semiconductor device and method of making semiconductor device

US9337047B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Danny Pak-Chum Shum · Poughkeepsie, US
• Ronald Kakoschke · Birkenfeld, DE
• John Power · Kilmacthomas, IE
• Wolfram Langheinrich · Dresden, DE

Key dates

• Filing date: Sep 17, 2007
• Grant date: May 10, 2016
• Expiry date: May 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

One or more embodiments are related to a semiconductor device, comprising: a high-K dielectric material; and a nitrogen-doped silicon material disposed over said high-k dielectric material.