Method of manufacturing semiconductor device
US9337093B2 · kind B2 · utility
7Cited by
7References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2011 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.