Method of forming contact useful in replacement metal gate processing and related semiconductor structure
US9337094B1 · kind B1 · utility
28Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Jan 5, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a contact is provided. The method may include forming a liner against a spacer around a gate; selectively removing an upper portion of the liner adjacent the spacer, forming a void; forming a spacer extension by filling the void with a spacer material; and forming a contact self-aligned to the spacer extension. A semiconductor structure is also disclosed. The structure may include: a gate; a spacer around the gate; a spacer extension extending laterally from an upper portion of the spacer; and a contact self-aligned to the spacer extension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.