Method for removing hard mask oxide and making gate structure of semiconductor devices

US9337103B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yi-An Lin · Taichung, TW
• Chun-Wei Chang · Taoyuan, TW
• Neng-Kuo Chen · Hsinchu, TW
• Sey-Ping Sun · Austin, US
• Clement Hsingjen Wann · Carmel, US

Key dates

• Filing date: Dec 7, 2012
• Grant date: May 10, 2016
• Expiry date: Dec 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0135

Abstract

A method includes forming a first gate above a semiconductor substrate, forming a hard mask on the first gate, and forming a contact etch stop layer (CESL) on the hard mask. No hard mask is removed between the step of forming the hard mask and the step of forming the CESL. The method further includes forming an interlayer dielectric (ILD) layer over the CESL, and performing one or more CMP processes to planarize the ILD layer, remove the CESL on the hard mask, and remove at least one portion of the hard mask.